BSR14 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

BSR14
C
SOT-23
Mark: U8
E
B
NPN General Purpose Amplifier
This device is for use as a medium power amplifier and switch
requiring collector currents up to 500 mA. Sourced from Process
19. See BCW65C for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CEO
V_CBO
Collector-Emitter Voltage
Collector-Base Voltage
40
V
3
75
V
V_EBO
Emitter-Base Voltage
6.0
V
I_C
Collector Current - Continuous
800
mA
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Max
*BSR14
350
2.8
357
Units
mW
mW /°C
°C/W
1997 Fairchild Semiconductor Corporation