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| BSR13 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN switching transistors | |||
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BSR13
NPN General Purpose Amplifier
⢠Sourced from process 10.
C
E
B SOT-23
Mark: U7
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
30
60
5.0
0.5
-55 ~ 150
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics
IC = 10mA, IB = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 50V, IE = 0
VCB = 50V, IE = 0, Ta = 150°C
VEB = 3.0V, IC = 0
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage *
VBE(sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
IC = 0.1mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V *
IC = 150mA, VCE = 1.0V *
IC = 500mA, VCE = 10V *
IC = 150mA, IB = 15V
IC = 500mA, IB = 50V
IC = 150mA, IB = 15V
IC = 500mA, IB = 50V
fT
Curent Gain Bandwidth Product
* Pulse Test: Pulse Width ⤠300µs, Duty Cycle ⤠2.0%
IC = 20mA, VCE = 20V, f = 100MHz
Min.
30
60
5.0
35
50
75
100
50
30
250
Max. Units
V
V
V
30
nA
10
µA
15
nA
300
0.4
V
1.6
1.3
V
2.6
©2004 Fairchild Semiconductor Corporation
Rev. A, September 2004
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