BSP50 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN Darlington transistors

BSP50
NPN Darlington Transistor
• This device is designed for applications requiring extremly high current
gain at collector currents to 500mA.
• Sourced from process 03.
4
3
2
1 _SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
V_CER
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
- Continuous
T_J, T_STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
45
60
5
800
- 55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
V_(BR)CBO Collector-Base Breakdown Voltage
V_(BR)EBO Emitter-Base Breakdown Voltage
I_CES
Collector Cutoff Current
I_EBO
Emitter Cutoff Current
On Characteristics
I_C = 100µA, I_E = 0
I_E = 10µA, I_C = 0
V_CE = 45V, V_BE = 0
V_EB = 4.0V, I_C = 0
h_FE
DC Current Gain
V_CE(sat)
V_BE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I_C = 150mA, V_CE = 10V
I_C = 500mA, V_CE = 10V
I_C = 500mA, I_B = 0.5mA
I_C = 500mA, I_B = 0.5mA
Min. Typ. Max. Units
60
V
5
V
50 nA
50 nA
1000
2000
1.3
V
1.9
V
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
Max.
1000
8.0
125
Units
mW
mW/°C
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, May 2004