BS170_01 Datasheet, PDF (1/13 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

April 1995
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
Features
High density cell design for low R_DS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
T_A = 25°C unless otherwise noted
BS170
V_DSS
Drain-Source Voltage
V_DGR
Drain-Gate Voltage (R_GS < 1MΩ)
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
500
1200
P_D
Maximum Power Dissipation
830
Derate Above 25°C
6.6
T_J,T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistacne, Junction-to-Ambient
150
© 1997 Fairchild Semiconductor Corporation
60
60
± 20
-55 to 150
300
MMBF170
500
800
300
2.4
Units
V
V
V
mA
mW
mW/°C
°C
°C
417
°C/W
BS170 Rev. C / MMBF170 Rev. D