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| BF494 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN medium frequency transistors | |||
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BF494
NPN RF Transistor
July 2006
tm
TO-92
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
1. Collector 2. Emitter 3. Base
Value
Unit
VCEO
Collector-Emitter Voltage
20
V
VCBO
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
30
mA
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature Range
- 55 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
PD
RθJC
RθJA
Parameter
Total Device Dissipation, by RθJA
Derate above 25°C
Thermal Resistance, Junction to case
Thermal Resistance, Junction to Ambient
Value
350
2.8
125
357
Unit
mW
mW/°C
°C/W
°C/W
Electrical Characteristics* TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
hFE
VCE(sat)
VBE(sat)
VBE(ON)
Collector-Emitter Breakdown Voltage
Collector-Base BreakdownVoltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 1.0mA, IB = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCE = 40V, VEB = 0V
VCE = 10V, IC = 1mA
IC = 10mA, IB = 5mA
IC = 10mA, IB = 5mA
VCE = 10V, IC = 10mA
* DC Item are tested by Pulse Test: Pulse Widthâ¤300us, Duty Cycleâ¤2%
Min.
20
30
5.0
67
650
Max.
10
222
0.2
0.92
740
Units
V
V
V
nA
V
V
mV
©2006 Fairchild Semiconductor Corporation
1
BF494 Rev. A
www.fairchildsemi.com
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