BF256B Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – N-Channel RF Amplifiers

November 2014
BF256B
N-Channel RF Amplifiers
Features
• This device is designed for VHF / UHF amplifiers
• Sourced from process 50
1
TO-92
1. Gate 2. Source 3. Drain
Ordering Information
Part Number
BF256B
Top Mark
BF256B
Package
TO-92 3L
Packing Method
Bulk
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T_A = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
V_DG
V_GS
I_GF
T_J, T_STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Temperature Range
30
V
-30
V
10
mA
-55 to 150
°C
Thermal Characteristics
Values are at T_A = 25°C unless otherwise noted.
Symbol
Parameter
P_D
Total Device Dissipation at T_A = 25°C
Derate Above 25°C
Value
350
2.8
Unit
mW
mW/°C
© 2003 Fairchild Semiconductor Corporation
BF256B Rev. 1.1.0
www.fairchildsemi.com