BF256A Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – N-Channel RF Amplifiers

BF256A/BF256B/BF256C
N-Channel RF Amplifiers
• This device is designed for VHF/UHF amplifiers.
• Sourced from process 50.
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_DG
Drain-Gate Voltage
V_GS
Gate-Source Voltage
I_GF
Forward Gate Current
P_D
Total Device Dissipation @T_A=25°C
Derate above 25°C
T_STG
Operating and storage Temperature Range
1
TO-92
1. Gate 2. Source 3. Drain
Value
30
-30
10
350
2.8
- 55 ~ 150
Units
V
V
mA
mW
mW/°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)GSS Gate-Source Breakdown Voltage
V_GS
Gate-Source
V_GS(off) Gate-Source Cutoff Voltage
I_GSS
Gate Reverse Current
On Characteristics
V_DS = 0, I_G = 1µA
V_DS = 15V, I_D = 200µA
V_DS = 15V, I_D = 10nA
V_GS = -20V, V_GS = 0
I_DSS
Zero-Gate Voltage Drain Current
BF256A
BF256B
BF256C
V_GS = 15V, V_GS = 0
Small Signal Characteristics
gfs
Common Source Forward Transconductance V_DS = 15V, V_GS = 0, f = 1KHz
Min. Max. Units
-30
V
-0.5 -7.5
V
-0.5
-8
V
-5
nA
3
7
mA
6
13
11
18
4.5
mmhos
©2003 Fairchild Semiconductor Corporation
Rev. A, June 2003