BF246B Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – N-Channel Switch

BF246B
N-Channel Switch
• This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers.
• Sourced from process 51.
• See J111 for characteristics.
TO-92
DGS
1. Drain 2. Gate 3. Source
Absolute Maximum Ratings* T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_DG
V_GS
I_GF
T_J, T_STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
-25
50
-55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may e impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
V_(BR)GSS Gate-Source Breakdown Voltage
I_GSS
Gate Reverse Current
V_GS(off)
Gate-Source Cutoff Voltage
On Characteristics*
I_DSS
Zero-Gate Voltage Drain Current *
I_G = 1.0µA, V_DS = 0
V_GS = -15V, V_DS = 0
V_DS = 15V, I_D = 10nA
V_DS = 15V, V_GS = 0
Thermal Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Value
625
5.0
125
357
Units
V
V
mA
°C
Min. Max Units
-25
V
-5.0
nA
-0.6
-14.5
V
60
140
mA
Units
mW
mW/°C
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
BF246B Rev. A
www.fairchildsemi.com