BF245A Datasheet, PDF (1/3 Pages) NXP Semiconductors – N-channel silicon field-effect transistors

BF245A/BF245B/BF245C
N-Channel Amplifiers
• This device is designed for VHF/UHF amplifiers.
• Sourced from process 50.
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_DG
Drain-Gate Voltage
V_GS
Gate-Source Voltage
I_GF
Forward Gate Current
P_D
Total Device Dissipation @T_A=25°C
Derate above 25°C
T_J, T_STG
Operating and Storage Junction Temperature Range
1
TO-92
1. Gate 2. Source 3. Drain
Value
30
-30
10
350
2.8
- 55 ~ 150
Units
V
V
mA
mW
mW/°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)GSS
V_GS
Gate-Source Breakdown Voltage
Gate-Source
BF245A
BF245B
BF245C
V_DS = 0, I_G = 1µA
V_DS = 15V, I_D = 200µA
V_GS(off) Gate-Source Cut-off Voltage
I_GSS
Gate Reverse Current
On Characteristics
V_DS = 15V, I_D = 10nA
V_GS = -20V, V_GS = 0
I_DSS
Zero-Gate Voltage Drain Current
BF245A
BF245B
BF245C
V_GS = 15V, V_GS = 0
On Characteristics
g_fs
Common Source Forward
Transconductance
V_GS = 15V, V_GS = 0, f = 1KHz
Min. Max. Units
-30
V
-0.4
-2.2
V
-1.6
-3.8
-3.2
-7.5
-0.5
-8
V
-5
nA
2
6.5
mA
6
15
12
25
3
6.5 mmhos
©2003 Fairchild Semiconductor Corporation
Rev. A1, June 2003