BF199 Datasheet, PDF (1/3 Pages) Motorola, Inc – RF Transistor

NPN RF Transistor
BF199
Absolute Maximum Ratings* T_C=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
- Continuous
T_J, T_STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1
TO-92
1. Collector 2. Emitter 3. Base
Value
25
40
4.0
50
- 55 ~ 150
Units
V
V
V
mA
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CEO
Collector-Emitter Breakdown Voltage *
V_(BR)CBO
Collector-Base BreakdownVoltage
V_(BR)EBO
Emitter-Base Breakdown Voltage
I_CES
Collector Cut-off Current
On Characteristics
I_C = 1.0mA, I_B = 0
I_C = 100µA, I_E = 0
I_E = 10µA, I_C = 0
V_CE = 30V, I_E = 0
h_FE
DC Current Gain
V_CE(sat)
Collector-Emitter Saturation Voltage
V_BE(sat)
Base-Emitter Saturation Voltage
V_BE(on)
Base-Emitter On Voltage
Small Signal Characteristics
I_C = 7.0mA, V_CE = 10V
I_C = 10mA, I_B = 5.0mA
I_C = 10mA, I_B = 5.0mA
I_C = 7.0mA, V_CE = 10V
f_T
Current gain Bandwidth Product
I_C = 7.0mA, V_CE = 10V,
f = 100MHz
C_re
Common-Emitter Ruerse
Transfer Capacitance
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V_CB = 10V, I_E = 0, f = 1.0MHz
Min. Max. Units
25
V
40
V
4.0
V
50
nA
38
0.2
V
0.92
V
0.925
V
1100 MHz
0.4
pF
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002