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BDX54CTU Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Hammer Drivers, Audio Amplifiers Applications
BDX54/A/B/C
Hammer Drivers, Audio Amplifiers Applications
Power Liner and Switching Applications
• Power Darlington TR
• Complement to BDX53, BDX53A, BDX53B and BDX53C respectively
PNP Epitaxial Silicon Transistor
1
TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: BDX54
: BDX54A
: BDX54B
: BDX54C
VCEO
Collector-Emitter Voltage : BDX54
: BDX54A
: BDX54B
: BDX54C
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BDX54
: BDX54A
: BDX54B
: BDX54C
Test Condition
IC = - 100mA, IB = 0
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
VF
Collector Cut-off Current : BDX54
: BDX54A
: BDX54B
: BDX54C
Collector Cut-off Current : BDX54
: BDX54A
: BDX54B
: BDX54C
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Parallel Diode Forward Voltage
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
VCE = - 22V, IB = 0
VCE = - 30V, IB = 0
VCE = - 40V, IB = 0
VCE = - 50V, IB = 0
VEB = - 5V, IC = 0
VCE = - 3V, IC = - 3A
IC = - 3A, IB = - 12mA
IC = - 3A, IB = - 12mA
IF = - 3A
IF = - 8A
Value
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
-5
-8
- 12
- 0.2
60
150
- 65 ~ 150
Min. Typ.
- 45
- 60
- 80
- 100
750
- 1.8
- 2.5
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Max. Units
V
V
V
V
- 200 µA
- 200 µA
- 200 µA
- 200 µA
- 500 µA
- 500 µA
- 500 µA
- 500 µA
- 2 mA
-2 V
- 2.5 V
- 2.5 V
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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