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| BDW94CFTU Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor | |||
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BDW94CF
PNP Epitaxial Silicon Transistor
Power Linear and Switching Application
⢠Power Darlington TR
⢠Complement to BDW93CF Respectively
July 2005
1
TO-220F
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current (DC)
Collector Current (Pulse) *
Base Current
Collector Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
VCEO(sus)
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
VF
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain *
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Parallel Diode Forward Voltage *
IC -100mA, IB = 0
VCB = -100V, IE = 0
VVCE = -100V, IB = 0
VEB = -5V, IC = 0
VCE = -3V, IC = -3A
VCE = -3V, IC = -5A
VCE = -3V, IC = -10A
IC = -5A, IB = -20mA
IC = -10A, IB = -100mA
IC = -5A, IB = -20mA
IC = -10A, IB = -100mA
IF = -5A
IF = -10A
* Pulse Test: PW = 300µs, Duty Cycle = 1.5% Pulsed
Value
-100
-100
-12
-15
-0.2
30
150
-65 ~ 150
Min.
-100
1000
750
100
Units
V
V
A
A
A
W
°C
°C
Typ.
Max
-100
-1
-2
Units
V
µA
mA
mA
20000
-2
V
-3
V
-2.5
V
-4
V
-1.3
-2
V
-1.8
-4
V
©2005 Fairchild Semiconductor Corporation
1
BDW94CF Rev. A
www.fairchildsemi.com
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