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| BDW93CF Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Hammer Drivers, Audio Amplifiers Applications | |||
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BDW93CF
Hammer Drivers,
Audio Amplifiers Applications
⢠Power Darlington TR
⢠Complement to BDW94CF respectively
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
100
100
12
15
0.2
30
150
- 65 ~ 150
Units
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO(sus)
ICBO
ICEO
IEBO
hFE
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
VF
* Parallel Diode Forward Voltage
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
IC = 100mA, IB = 0
VCB = 100V, IE = 0
VCE = 100V, IB = 0
VEB = 5V, IC = 0
VCE = 3V, IC = 3A
VCE = 3V, IC = 5A
VCE = 3V, IC = 10A
IC = 5A, IB = 20mA
IC = 10A, IB = 100mA
IC = 5A, IB = 20mA
IC = 10A, IB = 100mA
IF = 5A
IF = 10A
Min.
100
1000
750
100
Typ.
1.3
1.8
Max.
100
1
2
Units
V
µA
mA
mA
20000
2
V
3
V
2.5
V
4
V
2
V
4
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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