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| BD675AS Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor | |||
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Jameco Part Number 309825
BD675A/677A/679A/681
Medium Power Linear and Switching
Applications
⢠Medium Power Darlington TR
⢠Complement to BD676A, BD678A, BD680A and BD682 respectively
NPN Epitaxial Silicon Transistor
1
TO-126
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD675A
: BD677A
: BD679A
: BD681
VCEO
Collector-Emitter Voltage
: BD675A
: BD677A
: BD679A
: BD681
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
45
60
80
100
45
60
80
100
5
4
6
100
40
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
mA
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
VCEO(sus) *Collector-Emitter Sustaining Voltage
: BD675A
IC = 50mA, IB = 0
45
V
: BD677A
60
V
: BD679A
80
V
: BD681
100
V
ICBO
Collector-Base Voltage
: BD675A
: BD677A
: BD679A
: BD681
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, VBE = 0
ICEO
Collector Cut-off Current
: BD675A
: BD677A
: BD679A
: BD681
VCE = 45V, VBE = 0
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 100V, VBE = 0
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
hFE
* DC Current Gain
: BD675A/677A/679A VCE = 3V, IC = 2A
750
: BD681
VCE = 3V, IC = 1.5A 750
VCE(sat)
* Collector-Emitter Saturation Voltage
: BD675A/677A/679A
: BD681
IC = 2A, IB = 40mA
IC = 1.5A, IB = 30mA
VBE(on)
* Base-Emitter ON Voltage : BD675A/677A/679A
: BD681
VCE = 3V, IC = 2A
VCE = 3V, IC = 1.5A
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
200 µA
200 µA
200 µA
200 µA
500 µA
500 µA
500 µA
500 µA
2 mA
2.8 V
2.5 V
2.5 V
2.5 V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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