BD534 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Medium Power Linear and Switching Applications

BD534/536/538
Medium Power Linear and Switching
Applications
• Low Saturation Voltage
• Complement to BD533, BD535 and BD537 respectively
1
TO-220
PNP Epitaxial Silicon Transistor
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
V_CBO
Collector-Base Voltage
Parameter
: BD534
: BD536
: BD538
V_CEO
Collector-Emitter Voltage
: BD534
: BD536
: BD538
V_EBO
I_C
I_B
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current (DC)
Base Current
Collector Dissipation (T_C=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
I_CBO
I_CES
I_EBO
h_FE
Parameter
Collector Cut-off Current
: BD534
: BD536
: BD538
Collector Cut-off Current
: BD534
: BD536
: BD538
Emitter Cut-off Current
* DC Current Gain
: ALL DEVICE
: BD534/536
: BD538
: BD534/536
: BD538
Test Condition
V_CB = - 45V, I_E = 0
V_CB = - 60V, I_E = 0
V_CB = - 80V, I_E = 0
V_CE = - 45V, V_BE = 0
V_CE = - 60V, V_BE = 0
V_CE = - 80V, V_BE = 0
V_EB = - 5V, I_C = 0
V_CE = -2 V, I_C = - 500mA
V_CE = - 5V, I_C = - 10mA
V_CE = - 2V, I_C = - 2A
h_FE
h_FE Groups
J
: ALL DEVICE
K
: ALL DEVICE
V_CE(sat) * Collector-Emitter Saturation Voltage
V_BE(on) * Base-Emitter ON Voltage
f_T
Current Gain Bandwidth Product
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
V_CE = - 2V, I_C = - 2A
V_CE = - 2V, I_C = - 3A
V_CE = -2V, I_C = - 2A
V_CE = - 2V, I_C = - 3A
I_C = - 2A, I_B = - 0.2A
I_C = - 6A, I_B = - 0.6A
V_CE = - 2V, I_C = - 2A
V_CE = - 1V, I_C = - 500mA
Value
- 45
- 60
- 80
- 45
- 60
- 80
-5
-8
-1
50
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
W
°C
°C
Min.
40
20
15
25
15
30
15
40
20
3
Typ.
Max.
- 100
- 100
- 100
- 100
- 100
- 100
-1
Units
µA
µA
µA
µA
µA
µA
mA
75
100
- 0.8
12
- 0.8
- 1.5
V
V
V
MHz
©2000 Fairchild Semiconductor International
Rev. A, February 2000