BD533 Datasheet, PDF (1/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

BD533/535/537
Medium Power Linear and Switching
Applications
• Low Saturation Voltage
• Complement to BD534, BD536 and BD538 respectively
NPN Epitaxial Silicon Transistor
1
TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
V_CBO
Collector-Base Voltage
Parameter
: BD533
: BD535
: BD537
V_CES
Collector-Emitter Voltage
: BD533
: BD535
: BD537
V_CEO
Collector-Emitter Voltage
: BD533
: BD535
: BD537
V_EBO
I_C
I_B
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T_C=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
I_CBO
I_CES
I_EBO
h_FE
Parameter
Collector Cut-off Current : BD533
: BD535
: BD537
Collector Cut-off Current : BD533
: BD535
: BD537
Emitter Cut-off Current
* DC Current Gain
: BD533/535
: BD537
: ALL DEVICE
: BD533/535
: BD537
Test Condition
V_CB = 45V, I_E = 0
V_CB = 60V, I_E = 0
V_CB = 80V, I_E = 0
V_CE = 45V, V_BE = 0
V_CE = 60V, V_BE = 0
V_CE = 80V, V_BE = 0
V_EB = 5V, I_C = 0
V_CE = 5V, I_C = 10mA
V_CE = 2V, I_C = 500mA
V_CE = 2V, I_C = 2A
h_FE
h_FE Groups
J
: ALL DEVICE
K
: ALL DEVICE
V_CE(sat) * Collector-Emitter Saturation Voltage
V_BE(on) * Base-Emitter ON Voltage
f_T
Current Gain Bandwidth Product
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
V_CE = 2V, I_C = 2A
V_CE = 2V, I_C = 3A
V_CE = 2V, I_C = 2A
V_CE = 2V, I_C = 3A
I_C = 2A, I_B = 0.2A
I_C = 6A, I_B = 0.6A
V_CE = 2V, I_C = 2A
V_CE = 1V, I_C = 500mA
Value
45
60
80
45
60
80
45
60
80
5
8
1
50
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
V
A
A
W
°C
°C
Min.
20
15
40
25
15
Typ.
Max.
100
100
100
100
100
100
1
Units
µA
µA
µA
µA
µA
µA
mA
30
75
15
40
100
20
0.8
V
0.8
V
1.5
V
3
12
MHz
©2000 Fairchild Semiconductor International
Rev. A, February 2000