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| BD440 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Medium Power Linear and Switching Applications | |||
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BD440/442
Medium Power Linear and Switching
Applications
⢠Complement to BD439, BD441 respectively
PNP Epitaxial Silicon Transistor
1
TO-126
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD440
: BD442
VCES
Collector-Emitter Voltage
: BD440
: BD442
VCEO
Collector-Emitter Voltage
: BD440
: BD442
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
- 60
- 80
- 60
- 80
- 60
- 80
-5
-4
-7
-1
36
150
- 65 ~ 1 50
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
VCEO(sus)
Collector-Emitter Sustaining Voltage
: BD440
: BD442
IC = - 100mA, IB = 0
-60
-80
ICBO
ICES
IEBO
hFE
Collector Cut-off Current : BD440
: BD442
Collector Cut-off Current : BD440
: BD442
Emitter Cut-off Current
* DC Current Gain
: BD440
: BD442
: BD440
: BD442
: BD440
: BD442
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCE = - 60V, VBE = 0
VCE = - 80V, VBE = 0
VEB = - 5V, IC = 0
VCE = - 5V, IC = - 10mA
20
15
VCE = - 1V, IC = - 500mA 40
40
VCE = - 1V, IC = - 2A
25
15
VCE(sat)
VBE(on)
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
IC = - 2A, IB = - 0.2A
VCE = - 5V, IC = - 10mA
VCE = -1 V, IC = - 2A
VCE = - 1V, IC = - 250mA
3
Typ. Max. Units
V
V
- 100 µA
- 100 µA
- 100 µA
- 100 µA
- 1 mA
140
140
140
140
-0.58
- 0.8
- 1.5
V
V
V
MHz
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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