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| BD439 Datasheet, PDF (1/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS | |||
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BD439/441
Medium Power Linear and Switching
Applications
⢠Complement to BD440, BD442 respectively
NPN Epitaxial Silicon Transistor
1
TO-126
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
VCES
Parameter
Collector-Base Voltage
: BD439
: BD441
Collector-Emitter Voltage
: BD439
: BD441
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Emitter Voltage
: BD439
: BD441
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
ICBO
ICES
IEBO
hFE
VCE(sat)
VBE(on)
Parameter
* Collector-Emitter Sustaining Voltage
: BD439
: BD441
Collector Cut-off Current : BD439
: BD441
Collector Cut-off Current
: BD439
: BD441
Emitter Cut-off Current
* DC Current Gain
: BD439
: BD441
: BD439
: BD441
: BD439
: BD441
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Test Condition
IC = 100mA, IB = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 10mA
VCE =1V, IC = 500mA
VCE = 1V, IC = 2A
IC = 2A, IB = 0.2A
VCE = 5V, IC = 10mA
VCE = 1V, IC = 2A
VCE = 1V, IC = 250mA
Value
60
80
60
80
60
80
5
4
7
1
36
150
- 65 ~ 150
Min. Typ.
60
80
20 130
15 130
40 140
40 140
25
15
0.58
3
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Max. Units
V
V
100 µA
100 µA
100 µA
100 µA
1 mA
0.8 V
V
1.5 V
MHz
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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