BD435 Datasheet, PDF (1/5 Pages) ON Semiconductor – Plastic Medium Power Silicon NPN Transistor

BD433/435/437
Medium Power Linear and Switching
Applications
• Complement to BD434, BD436 and BD438 respectively
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
: BD433
: BD435
: BD437
V_CES
Collector-Emitter Voltage
: BD433
: BD435
: BD437
V_CEO
Collector-Emitter Voltage
: BD433
: BD435
: BD437
V_EBO
I_C
I_CP
I_B
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T_C=25°C)
Junction Temperature
Storage Temperature
Value
22
32
45
22
32
45
22
32
45
5
4
7
1
36
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001