BD433_11 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

BD433/435/437
NPN Epitaxial Silicon Transistor
Features
• Medium Power Linear and Switching Applications
• Complement to BD434, BD436 and BD438 respectively
July 2011
Ordering Information
Part Number
Marking
BD433S
BD433
BD435S
BD435
BD435STU
BD435
BD437S
BD437
* The suffix "S" of FSID denotes TO126 package.
Package
TO-126
TO-126
TO-126
TO-126
1
TO-126
1. Emitter 2.Collector 3.Base
Packing Method
BULK
BULK
RAIL
BULK
Remarks
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CES
Collector-Base Voltage
: BD433
: BD435
: BD437
Collector-Emitter Voltage
: BD433
: BD435
: BD437
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_J
T_STG
Collector-Emitter Voltage
: BD433
: BD435
: BD437
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T_C = 25°C)
Junction Temperature
Storage Temperature
Value
22
32
45
22
32
45
22
32
45
5
4
7
1
36
150
- 65 to 150
Units
V
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
© 2011 Fairchild Semiconductor Corporation
BD433/435/437 Rev. B0
1
www.fairchildsemi.com