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| BD376 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Medium Power Linear and Switching Applications | |||
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BD376/378/380
Medium Power Linear and Switching
Applications
⢠Complement to BD375, BD377 and BD379 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage : BD376
: BD378
: BD380
VCEO
Collector-Emitter Voltage : BD376
: BD378
: BD380
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
1
TO-126
1. Emitter 2.Collector 3.Base
Value
- 50
- 75
- 100
- 45
- 60
- 80
-5
-2
-3
-1
25
150
- 55 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
*Collector-Emitter Sustaining Voltage
: BD376
: BD378
: BD380
IC = - 100mA, IB = 0
BVCBO
Collector-Base
Breakdown Voltage
: BD376
: BD378
: BD380
IC = - 100µA, IE = 0
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(on)
tON
tOFF
Collector Cut-off Current : BD376
: BD378
: BD380
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter ON Voltage
Turn ON Time
Turn OFF Time
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VEB = - 5V, IC = 0
VCE = - 2V, IC = - 0.15A
VCE = - 2V, IC = - 1A
IC = - 1A, IB = - 0.1A
VCE = - 2V, IC = -1A
VCC = - 30V, IC = - 0.5A
IB1 = - IB2 = - 0.05A
RL = 60â¦
Min. Typ. Max. Units
- 45
V
- 60
V
- 80
V
- 50
V
- 75
V
- 100
V
- 2 µA
- 2 µA
- 2 µA
- 100 µA
40
375
20
-1 V
- 1.5 V
50
ns
500
ns
hFE Classificntion
Classification
hFE1
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
25
150 ~ 375
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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