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| BD375 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Medium Power Linear and Switching Applications | |||
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BD375/377/379
Medium Power Linear and Switching
Applications
⢠Complement to BD376, BD378 and BD380 respectively
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD375
: BD377
: BD379
VCEO
Collector-Emitter Voltage : BD375
: BD377
: BD379
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
1
TO-126
1. Emitter 2.Collector 3.Base
Value
50
75
100
45
60
80
5
2
3
1
25
150
- 55 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BD375
IC = 100mA, IB = 0
45
V
: BD377
60
V
: BD379
80
V
BVCBO
Collector-Base
: BD375
IC = 100µA, IE = 0
50
V
Breakdown Voltage
: BD377
75
V
: BD379
100
V
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(on)
tON
tOFF
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
: BD375
: BD377
: BD379
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Turn ON Time
Turn OFF Time
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
2 µA
2 µA
2 µA
VEB = 5V, IC = 0
100 µA
VCE = 2V, IC = 0.15A 40
375
VCE = 2V, IC = 1A
20
IC = 1A, IB = 0.1A
1
V
VCE = 2V, IC = 1A
1.5
V
VCC = 30V, IC = 0.5A
50
ns
IB1 = - IB2 = 0.05A
500
ns
RL = 60â¦
hFE Classification
Classification
hFE1
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
25
150 ~ 375
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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