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BD243 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(6A,65W)
BD243/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD244, BD244A, BD244B and BD244C respectively
1
TO-220
NPN Epitaxial Silicon Transistor
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD243
: BD243A
: BD243B
: BD243C
VCEO
Collector-Emitter Voltage
: BD243
: BD243A
: BD243B
: BD243C
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: BD243
: BD243A
: BD243B
: BD243C
IC=30mA, IB=0
ICEO
ICES
IEBO
hFE
Collector Cut-off Current : BD243/243A
: BD243B/243C
Collector Cut-off Current : BD243
: BD243A
: BD243B
: BD243C
Emitter Cut-off Current
*DC Current Gain
VCE(sat)
*Collector-Emitter Saturation Voltage
VBE(on)
*Base-Emitter ON Voltage
* Pulse Test :PW=300µs, duty Cycle<20% Pulsed
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VCE = 45V, VBE = 0
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 100V, VBE = 0
VEB = 5V, IC = 0
VCE = 4V, IC = 0.3A
VCE = 4V, IC = 3A
IC = 6A, IB = 1A
VCE = 4V, IC = 6A
Value
45
60
80
100
45
60
80
100
5
6
10
2
65
150
- 65 ~ 150
Min. Typ.
45
60
80
100
30
15
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Max. Units
V
V
V
V
0.7
mA
0.7
mA
0.4
mA
0.4
mA
0.4
mA
0.4
mA
1
mA
1.5
V
2
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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