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| BD242 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS | |||
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BD242/A/B/C
Medium Power Linear and Switching
Applications
⢠Complement to BD241/A/B/C respectively
1
TO-220
PNP Epitaxial Silicon Transistor
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
: BD242
: BD242A
: BD242B
: BD242C
VCER
Collector-Emitter Voltage
: BD242
: BD242A
: BD242B
: BD242C
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: BD242
: BD242A
: BD242B
: BD242C
IC = - 30mA, IB = 0
ICEO
ICES
IEBO
hFE
Collector Cut-off Current : BD242/A
: BD242B/C
Collector Cut-off Current : BD242
: BD242A
: BD242B
: BD242C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter ON Voltage
* Pulse Test: PW=300µs, duty Cycleâ¤2% Pulsed
VCE = - 30V, IB = 0
VCE = - 60V, IB = 0
VCE = - 45V, VBE = 0
VCE = - 60V, VBE = 0
VCE = - 80V, VBE = 0
VCE = - 100V, VBE = 0
VEB = - 5V, IC = 0
VCE = - 4V, IC = - 1A
VCE = - 4V, IC = - 3A
IC = - 3A, IB = - 0.6A
VCE = - 4V, IC = - 3A
Value
- 45
- 60
- 80
- 100
- 55
- 70
- 90
- 115
-5
-3
-5
-1
40
150
- 65 ~ 150
Min. Typ.
- 45
- 60
- 80
- 100
25
10
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Max. Units
V
V
V
V
- 0.3 mA
- 0.3 mA
- 0.2 mA
- 0.2 mA
- 0.2 mA
- 0.2 mA
- 1 mA
- 1.2
V
- 1.8
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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