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| BD241CTU Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Medium Power Linear and Switching Applications | |||
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BD241/A/B/C
Medium Power Linear and Switching
Applications
⢠Complement to BD242/A/B/C respectively
1
TO-220
NPN Epitaxial Silicon Transistor
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
: BD241
: BD241A
: BD241B
: BD241C
VCER
Collector-Emitter Voltage
: BD241
: BD241A
: BD241B
: BD241C
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
45
60
80
100
55
70
90
115
5
3
5
1
40
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: BD241
: BD241A
: BD241B
: BD241C
IC = - 30mA, IB = 0
ICEO
ICES
IEBO
hFE
Collector Cut-off Current : BD241/A
: BD241B/C
Collector Cut-off Current : BD241
: BD241A
: BD241B
: BD241C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter ON Voltage
* Pulse Test: PW=350µs, duty Cycleâ¤2% Pulsed
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VCE = 45V, VBE = 0
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 100V, VBE = 0
VEB = 5V, IC = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
IC = 3A, IB = 0.6A
VCE = 4V, IC = 3A
Min. Typ. Max. Units
45
V
60
V
80
V
100
V
0.3
mA
0.3
mA
0.2
mA
0.2
mA
0.2
mA
0.2
mA
1
mA
25
10
1.2
V
1.8
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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