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| BD239 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – NPN SILICON POWER TRANSISTORS | |||
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BD239/A/B/C
Medium Power Linear and Switching
Applications
⢠Complement to BD240/A/B/C respectively
NPN Epitaxial Silicon Transistor
1
TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
: BD239
: BD239A
: BD239B
: BD239C
VCER
Collector-Emitter Voltage
: BD239
: BD239A
: BD239B
: BD239C
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
45
60
80
100
55
70
90
115
5
2
4
0.6
30
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
*Collector-Emitter Sustaining Voltage
: BD239
: BD239A
: BD239B
: BD239C
IC = 30mA, IB = 0
ICEO
ICES
IEBO
hFE
Collector Cut-off Current
: BD239/A
: BD239B/C
Collector Cut-off Current
: BD239
: BD239A
: BD239B
: BD239C
Emitter Cut-off Current
*DC Current Gain
VCE(sat)
*Collector-Emitter Saturation Voltage
VBE(on)
*Base-Emitter ON Voltage
* Pulse Test: PW=350µs, duty Cycleâ¤2.0% Pulsed
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VCE = 45V, VBE = 0
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 100V, VBE = 0
VEB = 5V, IC = 0
VCE = 4V, IC = 0.2A
VCE = 4V, IC = 1A
IC = 1A, IB = 0.2A
VCE = 4V, IC = 1A
Min.
45
60
80
100
40
15
Typ.
Max. Units
V
V
V
V
0.3 mA
0.3 mA
0.2 mA
0.2 mA
0.2 mA
0.2 mA
1
mA
0.7
V
1.3
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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