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| BD238S Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Medium Power Linear and Switching Applications | |||
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BD234/236/238
Medium Power Linear and Switching
Applications
⢠Complement to BD 233/235/237 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD234
: BD236
: BD238
VCEO
Collector-Emitter Voltage
: BD234
: BD236
: BD238
VCER
Collector-Emitter Voltage
: BD234
: BD236
: BD238
VEBO
IC
ICP
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
1
TO-126
1. Emitter 2.Collector 3.Base
Value
- 45
- 60
- 100
- 45
- 60
- 80
- 45
- 60
- 100
-5
-2
-6
25
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BD234
IC = - 100mA, IB = 0
- 45
V
: BD236
- 60
V
: BD238
- 80
V
ICBO
IEBO
hFE
Collector Cut-off Current
: BD234
: BD236
: BD238
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter ON Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 100V, IE = 0
VEB = - 5V, IC = 0
VCE = - 2V, IC = - 150mA
40
VCE = - 2V, IC = - 1A
25
IC = - 1A , IB = - 0.1A
VCE = - 2V, IC = - 1A
VCE = - 10V, IC = -250mA
3
- 100 µA
- 100 µA
- 100 µA
- 1 mA
- 0.6
- 1.3
V
V
MHz
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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