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| BD233 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Medium Power Linear and Switching Applications | |||
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BD233/235/237
Medium Power Linear and Switching
Applications
⢠Complement to BD 234/236/238 respectively
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD233
: BD235
: BD237
VCEO
Collector-Emitter Voltage
: BD233
: BD235
: BD237
VCER
Collector-Emitter Voltage
: BD233
: BD235
: BD237
VEBO
IC
ICP
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
45
60
100
45
60
80
45
60
100
5
2
6
25
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BD233
IC = 100mA, IB = 0
45
V
: BD235
60
V
: BD237
80
V
ICBO
IEBO
hFE
Collector Cut-off Current
: BD233
: BD235
: BD237
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter ON Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 100V, IE = 0
VEB = 5V, IC = 0
VCE = 2V, IC = 150mA
40
VCE = 2V, IC = 1A
25
IC = 1A, IB = 0.1A
VCE = 2V, IC = 1A
VCE = 10V, IC = 250mA
3
100 µA
100 µA
100 µA
1 mA
0.6 V
1.3 V
MHz
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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