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| BD176 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Medium Power Linear and Switching Applications | |||
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BD176/178/180
Medium Power Linear and Switching
Applications
⢠Complement to BD 175/177/179 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
*Collector-Base Voltage
: BD176
: BD178
: BD180
VCEO
Collector-Emitter Voltage
: BD176
: BD178
: BD180
VEBO
IC
IC
PC
Rθja
Rθjc
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Junction to Ambient
Junction to Case
Junction Temperature
Storage Temperature
1
TO-126
1. Emitter 2.Collector 3.Base
Value
- 45
- 60
- 80
- 45
- 60
- 80
-5
-3
-7
30
70
8.5
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: BD176
: BD178
: BD180
IC = - 100mA, IB = 0
ICBO
IEBO
Collector Cut-off Current : BD176
: BD178
: BD180
Emitter Cut-off Current
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VEB = - 5V, IC = 0
Min. Typ. Max. Units
- 45
V
- 60
V
- 80
V
- 100 µA
- 100 µA
- 100 µA
- 1 mA
hFE1
hFE2
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter On Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
hFE Classificntion
Classification
6
hFE1
* Classification 16: Only BD 176
40 ~ 100
©2002 Fairchild Semiconductor Corporation
VCE = - 2V, IC = - 150mA 40
VCE = - 2V, IC = - 1A
15
IC = -1 A , IB = - 0.1A
VCE = - 2V, IC = -1 A
VCE = -10V, IC = - 250mA
3
250
- 0.8
- 1.3
V
V
MHz
10
63 ~ 160
16
100 ~ 250
Rev. B1, October 2002
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