BD157 Datasheet, PDF (1/4 Pages) Motorola, Inc – Plastic Medium Power NPN Silicon Transistor

BD157/158/159
Low Power Fast Switching Output Stages
• For T.V Radio Audio Output Amplifiers
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitxial Silicon Transistor
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
: BD157
: BD158
: BD159
V_CEO
Collector-Emitter Voltage
: BD157
: BD158
: BD159
V_EBO
I_C
I_CP
I_B
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T_C=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
*Collector-Emitter Breakdown Voltage
: BD157
: BD158
: BD159
I_C = 1mA, I_B = 0
I_CBO
Collector Cut-off Current
: BD157
: BD158
: BD159
I_EBO
Emitter Cut-off Current
h_FE
* DC Current Gain
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
V_CB = 275V, I_E = 0
V_CB = 325V, I_E = 0
V_CB = 375V, I_E = 0
V_EB = 5V, I_C = 0
V_CE = 10V, I_C = 50mA
Value
275
325
375
250
300
350
5
0.5
1.0
0.25
20
50
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Min. Typ. Max. Units
250
V
300
V
350
V
100 µA
100 µA
100 µA
100 µA
30
240
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001