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| BD135 Datasheet, PDF (1/4 Pages) Motorola, Inc – Plastic Medium Power Silicon NPN Transistor | |||
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BD135/137/139
Medium Power Linear and Switching
Applications
⢠Complement to BD136, BD138 and BD140 respectively
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD135
: BD137
: BD139
VCEO
Collector-Emitter Voltage
: BD135
: BD137
: BD139
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
45
60
80
45
60
80
5
1.5
3.0
0.5
12.5
1.25
150
- 55 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
Collector-Emitter Sustaining Voltage
: BD135
: BD137
: BD139
IC = 30mA, IB = 0
ICBO
IEBO
hFE1
hFE2
hFE3
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: ALL DEVICE
: ALL DEVICE
: BD135
: BD137, BD139
VCB = 30V, IE = 0
VEB = 5V, IC = 0
VCE = 2V, IC = 5mA
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 150mA
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
IC = 500mA, IB = 50mA
VCE = 2V, IC = 0.5A
Min. Typ. Max. Units
45
V
60
V
80
V
0.1 µA
10 µA
25
25
40
250
40
160
0.5
V
1
V
hFE Classification
Classification
hFE3
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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