BCX71G_02 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – General Purpose Transistor

BCX71G
General Purpose Transistor
3
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
P_C
Collector Power Dissipation
T_STG
Storage Temperature
• Refer to KST5086 for graphs
2
1 ^SOT-23
1. Base 2. Emitter 3. Collector
Value
-45
-45
-5.0
-100
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
BV_EBO
I_CES
h_FE
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
V_CE (sat) Collector-Emitter Saturation Voltage
V_BE (sat) Base-Emitter Saturation Voltage
V_BE (on)
C_ob
NF
Base-Emitter On Voltage
Output Capactance
Noise Figure
t_ON
Turn On Time
t_OFF
Turn Off Time
I_C= -2mA, I_B=0
I_E= -1µA, I_C=0
V_CE= -32V, V_BE=0
V_CE= -5V, I_C= -2mA
V_CE= -1V, I_C= -50µA
I_C= -10mA, I_B= -0.25mA
I_C= -50mA, I_B= -1.25mA
I_C= -10mA, I_B= -0.25mA
I_C= -50mA, I_B= -1.25mA
V_CE= -5V, I_C= -2mA
V_CB= -10V, I_E=0, f=1MHz
I_C=0.2mA, V_CE=5V
f=1KHz, R_S=2KΩ
I_C= -10mA, I_B1= -1mA
I_B2= -1mA, V_BB=3.6V
R_L=990Ω
Min.
-45
-5
120
60
-0.6
-0.68
-0.6
Max.
-20
220
-0.25
-0.55
-0.85
-1.05
-0.75
6
Units
V
V
nA
V
V
V
V
V
pF
dB
150
ns
800
ns
Marking
BG
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002