BCX71G Datasheet, PDF (1/2 Pages) Samsung semiconductor – PNP EPITAXIAL SILICON TRANSISTOR

BCX71G
PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
• Refer to KS5086 for graphs
VCBO
VCEO
VEBO
IC
PC
TSTG
-45
V
-45
V
-5.0
V
-100
mA
350
mW
150
°C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25°C)
Characteristic
Symbol
Test Conditions
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Noise Figure
Turn On Time
Turn Off Time
BVCEO
BVEBO
ICES
hFE
VCE (sat)
VBE (sat)
VBE (on)
COB
NF
TON
TOFF
IC= -2mA, IB=0
IE= -1µA, IC=0
VCE= -32V, VBE=0
VEB= -5V, IC= -2mA
VCE= -1V, IC= -50µA
IC= -10mA, IB= -0.25mA
IC= -50mA, IB= -1.25mA
IC= -10mA, IB= -0.25mA
IC= -50mA, IB= -1.25mA
IC= -2mA, VCE= -5V
VCB= -10V, IE=0
f=1MHz
IC=0.2mA, VCE=5V
RS=2KΩ, f=1KHz
IC= -10mA, IB1= -1mA
IB2= -1mA, VBB=3.6V
RL=990Ω
Min
Max
Unit
-45
V
-5
V
-20
nA
120
220
60
-0.25
V
-0.55
V
-0.6
-0.85
V
-0.68
-1.05
V
-0.6
-0.75
V
6
pF
6
dB
150
ns
800
ns
©1999 Fairchild Semiconductor Corporation
Rev. B