BCX70K Datasheet, PDF (1/3 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR

BCX70K
General Purpose Transistor
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
P_C
Collector Power Dissipation
T_STG
Storage Temperature
• Refer to KST3904 for graphs
2
1 ^SOT-23
1. Base 2. Emitter 3. Collector
Value
45
45
5
200
350
-55 ~ 150
Units
V
V
V
mA
mW
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
BV_EBO
I_CES
I_EBO
h_FE
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
V_CE (sat) Collector-Emitter Saturation Voltage
V_BE (sat) Base-Emitter Saturation Voltage
V_BE (on)
f_T
C_ob
NF
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
t_ON
Turn On Time
t_OFF
Turn Off Time
I_C=2.0mA, I_B=0
I_E=1.0µA, I_C=0
V_CE=32V, V_BE=0
V_EB=4V, I_C=0
V_CE=5V, I_C=10µA
V_CE=5V, I_C=2.0mA
V_CE=1V, I_C=50mA
I_C=10mA, I_B=0.25mA
I_C=50mA, I_B=1.25mA
I_C=10mA, I_B=0.25mA
I_C=50mA, I_B=1.25mA
I_C=2.0mA, V_CE=5V
I_C=10mA, V_CE=5V, f=100MHz
V_CB=10V, I_E=0, f=1MHz
V_CE=5V, I_C=0.2mA
R_S=2KΩ, f=1KHz
I_C=10mA, I_B1=1.0mA
V_BB=3.6V, I_B2=1.0mA
R₁=R₂=5KΩ, R_L=990Ω
Min.
45
5
100
380
100
0.6
0.7
0.55
125
Max.
20
20
Units
V
V
nA
nA
630
0.35
V
0.55
V
0.85
V
1.05
V
0.75
V
MHz
4.5
pF
6
dB
150
ns
800
ns
Marking
AK
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002