BCX70H Datasheet, PDF (1/2 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR

BCX70H
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
• Refer to KS3904 for graphs
VCBO
VCEO
VEBO
IC
PC
TSTG
45
V
45
V
5
V
200
mA
350
mW
150
°C
SOT-23
ELECTRICAL CHARACTERISTICS (TA=25°C)
Characteristic
Symbol
Test Conditions
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Turn On Time
Turn Off Time
BVCEO
BVEBO
ICES
IEBO
hFE
VCE (sat)
VBE (sat)
VBE (on)
fT
COB
NF
TON
TOFF
IC=2.0mA, IB=0
IE=1.0µA, IC=0
VCE=32V, VBE=0
VEB=4V, IC=0
VCE=5V, IC=10µA
VCE=5V, IC=2.0mA
VCE=1V, IC=50mA
IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA
IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA
IC=2.0mA, VCE=5V
IC=10mA, VCE=5V
VCE=10V, IE=0
f=1MHz
VCE=5V, IC=0.2mA
RS=2KΩ, f=1KHz
IC=10mA, IB1=1.0mA
VBB=3.6V, IB2=1.0mA
R1=R2=5KΩ, RL=990Ω
1. Base 2. Emitter 3. Collector
Min
45
5
120
180
70
0.6
0.7
0.55
125
Max
20
20
310
0.35
0.55
0.85
1.05
0.75
4.5
6
150
800
Unit
V
V
nA
nA
V
V
V
V
V
MHz
pF
dB
ns
ns
©1999 Fairchild Semiconductor Corporation
Rev. B