BCX70G Datasheet, PDF (1/2 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR

BCX70G
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
• Refer to KS5088 for graphs
VCBO
VCEO
VEBO
IC
PC
TSTG
45
V
45
V
5
V
200
mA
350
mW
150
°C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25°C)
Characteristic
Symbol
Test Conditions
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Turn On Time
Turn Off Time
BVCEO
BVEBO
ICES
IEBO
hFE
VCE (sat)
VBE (sat)
VBE (on)
fT
COB
NF
TON
TOFF
IC=2mA, IB=0
IE=1µA, IC=0
VCE=32V, VBE=0
VEB=4V, IC=0
VCE=5V, IC=2mA
VCE=1V, IC=50mA
IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA
IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA
IC=2mA, VCE=5V
VCE=5V, IC=10mA
VCB=10V, IE=0
f=1MHz
IC=0.2mA, VCE=5V
f=1KHz, RS=2KΩ
IC=10mA, IB1=1mA
IB2=1mA, VBB=3.6V
RL=990Ω R1=R2=5KΩ
Min
45
5
120
60
0.6
0.7
0.55
125
Max
20
20
220
0.35
0.55
0.85
1.05
0.75
4.5
6
150
800
Unit
V
V
nA
nA
V
V
V
V
V
MHz
pF
dB
ns
ns
©1999 Fairchild Semiconductor Corporation
Rev. B