BCX20 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor Switching and Amplifier Applications

BCX20
NPN Epitaxial Silicon Transistor
Switching and Amplifier Applications
January 2005
3
2
1 ^SOT-23
Marking: U2
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CES
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
BV_CEO
BV_CES
BV_EBO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
V_CE(sat)
V_BE(on)
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I_C = 10mA, I_B = 0
I_C = 100µA, V_BE = 0
I_E = 10µA, I_C = 0
V_CE = 20V, V_BE = 0
V_BE =5V, I_C = 0
V_CE = 1V, I_C = 100mA
V_CE = 1V, I_C = 300mA
V_CE = 1V, I_C = 500mA
I_C = 500mA, I_B = 50mA
V_CE = 1A, I_B = 500mA
Value
30
25
5
800
310
150
-65 ~ 150
Min.
25
30
5
100
70
40
Units
V
V
V
A
W
°C
°C
Max
100
10
600
Units
V
V
V
nA
nA
0.62
V
1.2
V
©2005 Fairchild Semiconductor Corporation
1
BCX20 Rev. A
www.fairchildsemi.com