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| BCX17 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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BCX17
PNP General Purpose Amplifier
⢠This device is esigned for general purpose amplifier and switching
application at current 0.5A.
⢠Sourced from process 78.
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
3
2
SOT-23
1 Mark: T1
1. Base 2. Emitter 3. Collector
Value
45
50
5.0
500
-55 ~ +150
Units
V
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V(BR)CEO
V(BR)CES
ICBO
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics
IC = 10mA, IB = 0
45
IC = 10µA, IC = 0
50
VCE = 20V, IE = 0
VCE = 20V, IE = 0, TA = 150°C
VEB = 5.0V, IC = 0
V
V
100 nA
5.0 µA
10 µA
hFE
DC Current Gain
IC = 100mA, VCE = 1.0V
100
IC = 300mA, VCE = 1.0V
70
IC = 500mA, VCE = 1.0V
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 500mA, IB = 50mA
VBE(on)
Base-Emitter On Voltage
IC = 500mA, VCE = 1.0V
600
0.62 V
1.2 V
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Alumina Substrate,** TA = 25°C
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
** Alumina = 0.4Ã0.3Ã0.024 in. 9.5% alumina
Max.
300
2.4
417
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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