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| BCW89 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP general purpose transistor | |||
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BCW89
PNP General Purpose Amplifier
⢠This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 300mA.
⢠Sourced from process 68.
3
2
1
SOT-23
Mark: H3
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCES
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector current
- Continuous
TJ, Tstg
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
-60
-60
-5.0
-500
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CBO
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
On Characteristics
IC = -10µA, IE = 0
IC = -2.0mA, IB = 0
IC = -10µA, IE = 0
IC = -10µA, IC = 0
VCB = -20V, IE = 0
VCB = -20V, IE = 0, TA = +100°C
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
VCE = -5.0V, IC = -2.0mA
IC = -10mA, IB = -0.5mA
VCE = -5.0V, IC = -2.0mA
NF
Noise Figure
VCE = -5.0V, IC = -200µA
RS = 2.0kâ¦, f = 1.0kHz
BW = 200Hz
Min. Max. Units
-80
V
-60
V
-60
V
-5.0
V
-100
nA
-10
µA
120 260
-0.3
V
-0.6 -0.75
V
10
dB
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
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