BCW71_1 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

BCW71
C
SOT-23
Mark: K1
E
B
NPN General Purpose Amplifier
This device is designed for general purpose amplifier
applications at collector currents to 300 mA. Sourced from
Process 10.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCES
Collector-Emitter Voltage
Collector-Base Voltage
45
50
V
V
3
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
500
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Max
*BCW71
350
2.8
357
Units
mW
mW/°C
°C/W
1997 Fairchild Semiconductor Corporation