BCW71 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistors

BCW71
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TSTG
50
V
45
V
5
V
100
mA
350
mW
150
°C
• Refer to KST2222 for graphs
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25°C)
Characteristic
Symbol
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figures
BVCBO
BVCEO
BVCES
BVEBO
ICBO
hFE
VCE (sat)
VBE (sat)
VBE (on)
fT
COB
NF
IC=10µA, IE=0
IC=2mA, IB=0
IC=2mA, VEB=0
IE=10µA, IC=0
VCB=20V, IE=0
VCE=5V, IC=2mA
IC=10mA, IB=0.5mA
IC=50mA, IB=2.5mA
IC=50mA, IB=2.5mA
IC=2mA, VCE=5V
VCE=5V, IC=10mA
f=35MHz
VCB=10V, IE=0
f=1MHz
VCE=5V, IC=2.0mA
RG=2KΩ, f=1KHz
Min
50
45
45
5
110
0.6
Typ
0.21
0.85
300
Max
100
220
0.25
0.75
4
10
Unit
V
V
V
V
nA
V
V
V
V
MHz
pF
dB
©1999 Fairchild Semiconductor Corporation
Rev. B