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| BCW66G Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier | |||
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BCW66G
NPN General Purpose Amplifier
⢠This device is designed for general purpose amplifier applications at
collector currents to 500mA.
⢠Sourced from process 13.
3
2
1 SOT-23
Mark: EG
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
45
75
5
1
- 55 ~ +150
NOTES:
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICES
IEBO
hFE
VCE(sat)
VBE(sat)
Cobo
Cibo
fT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
Current gain Bandwidth Product
IC = 10µA
IC = 10mA
IE = 10µA
VCB = 45V, IE = 0
VCB = 45V, IE = 0
TA = 150°C
VEB = 4V
VCE = 10V, IC = 100µA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 100mA
VCE = 2V, IC = 500mA
IC = 100mA, IB = 10mA
IC = 500mA, IB = 50mA
IC = 500mA, IB = 50mA
VCB = 10V, f = 1MHz
VEB = 0.5V, f = 1MHz
VCE = 10V, IC = 20mA,
f = 100MHz
NF
Noise Figure
VCE = 5V, IC = 0.2mA, RS = 1kâ¦,
f = 1KHz, BW = 200Hz
ton
Turn-On Time
toff
Turn-Off Time
IB1 = IB2 = 15mA
IC = 150mA, RL = 150â¦
Min. Typ. Max. Units
75
V
45
V
5
V
20 nA
20 µA
20 nA
50
110
160
400
60
0.3 V
0.7
2
V
12 pF
80 pF
100
MHz
10 dB
100 ns
400
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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