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| BCW33 Datasheet, PDF (1/5 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR | |||
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BCW33
NPN General Purpose Amplifier
⢠This device is designed for general purpose applications at collector
currents to 300mA.
⢠Sourced from process 07.
3
2
1
SOT-23
Mark: D3
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector current (DC)
TJ, Tstg
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
32
32
5.0
500
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
On Characteristics
IC = 2.0mA, IB = 0
IC = 10µA, IB = 0
IC = 10µA, IC = 0
VCB = 32V, IE = 0
VCB = 32V, IE = 0, TA = 100°C
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
IC = 2.0mA, VCE = 5.0V
IC = 10mA, IB = 0.5mA
IC = 2.0mA, VCE = 5.0V
fT
Current Gain Bandwidth Product
IC = 2.0mA, VCE = 5.0V
f = 35MHz
Cobo
NF
Output Capacitance
Noise Figure
VCB = 10V, IE = 0, f = 1.0MHz
IC = 0.2mA, VCE = 5.0V
RS = 2.0kâ¦, f = 1.0kHz
BW = 200Hz
Min.
32
32
5.0
420
0.55
200
Typ. Max. Units
V
V
V
100 nA
10 µA
800
0.25 V
0.7 V
4.0 pF
10 dB
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Device mounted on FR-4PCB 40mm à 40mm à 1.5mm
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
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