BCW31 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistors

BCW31
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
SOT-23
 ABSOLUTE MAXIMUM RATINGS (TA=25 )
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
• Refer to KST5088 for graphs
VCBO
VCEO
VEBO
IC
PC
TSTG
30
V
20
V
5
V
100
mA
350
150
^mW
1. Base 2. Emitter 3. Collector
 ELECTRICAL CHARACTERISTICS (TA=25 )
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Noise Figures
Symbol
BVCBO
BVCEO
BVEBO
hFE
VCE (sat)
VBE (on)
COB
NF
Test Conditions
} IC=10 , IE=0
} ^{IC=2mA, IB=0}
IE=10 , IC=0
VCE=5V, IC=2mA
IC=10mA, IB=0.5mA
VCE=5V, IC=2mA
VCB=10V, IE=0
f=1MHz
Π^{VCE=5V, IC=0.2mA}
RG=2 , f=1KHz
Min Typ
30
20
5
110
0.55
Max Unit
V
V
V
220
0.25
V
0.7
V
4
pF
10 dB
©1999 Fairchild Semiconductor Corporation
Rev. B