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BCW30_02 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier
BCW30
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 300mA.
• Sourced from process 68.
3
2
1
SOT-23
Mark: C2
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCES
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector current
- Continuous
TJ, Tstg
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
-32
-32
-5.0
-500
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V(BR)CBO
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
On Characteristics
IC = -10µA, IE = 0
-32
IC = -2.0mA, IB = 0
-32
IC = -10µA, IE = 0
-32
IC = -10µA, IC = 0
-5.0
VCB = -32V, IE = 0
VCB = -32V, IE = 0, TA = +100°C
V
V
V
V
-100 nA
-10 µA
hFE
DC Current Gain
VCE = -5.0V, IC = -2.0mA
215
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -10mA, IB = -0.5mA
VBE(on)
Base-Emitter On Voltage
VCE = -5.0V, IC = -2.0mA
-0.6
Small Signal Characteristics
500
-0.3 V
-0.7 V
NF
Noise Figure
VCE = -5.0V, IC = -200µA
RS = 2.0kΩ, f = 1.0kHz
BW = 200Hz
10 dB
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002