BCW30 Datasheet, PDF (1/2 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTORS

Discrete POWER & Signal
Technologies
BCW30
C
E
B
SOT-23
Mark: C2
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 300 mA.
Sourced from Process 68. See BC857A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
V_CES
V_EBO
I_C
T_J, T_stg
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
32
32
5.0
500
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Max
*BCW30
350
2.8
357
Units
V
V
V
mA
°C
Units
mW
mW /°C
°C/W
© 1997 Fairchild Semiconductor Corporation
W30, Rev B