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| BCV71 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN general purpose transistors | |||
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BCV71
NPN General Purpose Amplifier
⢠This device is designed for general purpose applications at collector
currents to 300mA.
⢠Sourced from process 10.
3
2
1
SOT-23
Mark: K7
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector current (DC)
TJ, Tstg
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
60
80
5.0
500
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
On Characteristics
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCB = 20V, IE = 0
VCB = 20V, IE = 0, Ta = 100°C
hFE
VCE(sat)
VBE(on)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 2.0mA, VCE = 5.0V
IC = 10mA, IB = 0.5mA
IC = 2.0mA, VCE = 5.0V
Min. Typ. Max. Units
80
V
60
V
5.0
V
100 nA
10 µA
110
220
0.25 V
0.55
0.7 V
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Device mounted on FR-4PCB 40mm à 40mm à 1.5mm
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
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