BCP55 Datasheet, PDF (1/6 Pages) STMicroelectronics – MEDIUM POWER AMPLIFIER

BCP55
C
SOT-223
E
C
B
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.0 A. Sourced from Process 38. See BCP54 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
60
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
5.0
IC
Collector Current - Continuous
1.5
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JA
Thermal Resistance, Junction to Ambient
Max
BCP55
1.5
12
83.3
Units
V
V
V
A
°C
Units
W
mW/°C
°C/W
© 1997 Fairchild Semiconductor Corporation