BCP51 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP medium power transistors

BCP51
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
and switches requiring collecor currents to 1.0A.
• Sourced from process 77.
4
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
- Continuous
T_J, T_STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
Value
-45
-45
-5.0
-1.5
- 55 ~ 150
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I_EBO
Emitter Cut-off Current
On Characteristics
I_C = -10mA, I_B = 0
I_C = -100µA, I_E = 0
I_E = -10µA, I_C = 0
V_CB = -30V, I_E = 0
V_CB = -30V, I_E = 0, T_a = 125°C
V_EB = -5.0V, I_C = 0
h_FE
V_CE(sat)
V_BE(on)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I_C = -5.0mA, V_CE = -2.0V
I_C = -150mA, V_CE = -2.0
I_C = -500mA, V_CE = -2.0V
I_C = -500mA, I_B = -50mA
I_C = -500mA, V_CE = -2.0V
Min. Max. Units
-45
V
-45
V
-5.0
V
-100 nA
-10
µA
-10
µA
25
40
250
25
-0.5
V
-1.0
V
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm².
Max.
1.0
8.0
125
Units
W
mW/°C
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, August 2004