BC847S Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)

BC847S
E2
B2
C1
SC70-6
Mark: 1C
C2
B1
pin #1 E1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 200 mA. Sourced from Process 07.
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCES
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
45
V
50
V
4
50
V
6.0
V
200
mA
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T_A = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Max
BC847S
300
2.4
415
Units
mW
mW/°C
°C/W
2001 Fairchild Semiconductor Corporation
Rev.A1